MOCVD Thin Solid Films / Ge / Lawrence Berkeley National Laboratory / Hatfield S A / Thin Solid Films / Renewable Energy / Argonne National Laboratory / /
Country
China / Ireland / / /
Facility
Harbin Institute of Technology / Institute of Technology Jiecai Han Harbin Institute / InN Phys / Yuankun Zhu Harbin Institute of Technology Rueben J. Mendelsberg Lawrence Berkeley National Laboratory Argonne National Laboratory Jiaqi Zhu / Building Technology / University of California / /
IndustryTerm
conduction band dispersion energy / carrier concentration / direct bandgap energy / oxide electronics / lower energy absorption edge / carrier lifetime / high carrier concentration / carrier concentrations / chemical vapor deposition / charge carrier mobility / energy / carrier-concentration-dependent effective mass / level stabilization energy / optical communications / gas sensors / energy parameter / /
Movie
Yuankun Zhu Harbin Institute of Technology Rueben J / Yuankun Zhu1 / Rueben J / /
MusicGroup
King / Envelope / Moss / Thin Solid Films / Windows / Veal / Gamma / /
OperatingSystem
Fermi / Microsoft Windows / /
Organization
University of California / U.S. Department of Energy / Programs Foundation / Harbin Institute of Technology / United States Government / office of Building Technology / National Natural Science Foundation of China / Center for Composite Materials and Structures / Envelope Materials Group Building Technology and Urban Systems Department Environmental Energy Technologies Division / Oxford university / Yuankun Zhu Harbin Institute of Technology Rueben J. Mendelsberg Lawrence Berkeley National Laboratory Argonne National Laboratory Jiaqi Zhu Harbin Institute / Ministry of Education / /
Person
André Anders / Nat / Elmer Lambda / Lawrence Berkeley / Jiaqi Zhu / / /
Position
King / Assistant Secretary / /
Product
B 52 / /
ProvinceOrState
D C / California / Illinois / /
Technology
alpha / X-ray / chemical vapor deposition / laser / semiconductors / Building Technology / dielectric / radio frequency / /
LBNL-6174E Dopant-induced band filling and bandgap renormalization in CdO:In films Yuankun Zhu Harbin Institute of Technology