Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui Li

First Page		Document Content
Date: 2016-08-11 14:28:58 Power electronics Semiconductor devices Energy storage Electric power conversion High-electron-mobility transistor Transistor Field-effect transistor Inductor Cascode H bridge Gate driver Ferrite bead		Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui Li Add to Reading List Source URL: www.transphormusa.com Download Document from Source Website File Size: 1,82 MB Share Document on Facebook

	Quantum Communications using Semiconductor Devices Andrew Shields Toshiba Research Europe Ltd 208 Science Park, Milton Road, Cambridge CB40GZ. UK www.quantum.toshiba.co.uk * DocID: 1vqum - View Document
	Dear Colleagues: Semiconductor Research Corporation (SRC) Global Research Collaboration (GRC) is soliciting White Papers in the thrust area of Logic and Memory Devices. The white paper, limited to two pages and addressin DocID: 1uNQx - View Document
	Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs  one of the most common materials for semiconductor devices DocID: 1tQeR - View Document
	E6: Optoelectronics Optoelectronics research area includes semiconductor based optoelectronic devices and materials as well DocID: 1sFF2 - View Document
	1 VI. Semiconductor Devices and Microelectronics 1. Bipolar Transistors Bipolar transistors in amplifiers 2. Field Effect Transistors DocID: 1sy2o - View Document