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Materials science / Carbon nanotubes / Carbon nanotube / Condensed matter physics / Superhard materials / N-type semiconductor / Nanoelectronics / Semiconductor / Graphene / Physics / Chemistry / Emerging technologies


Identi cation of Electron Donor States in N-doped Carbon Nanotubes R. Czerw1 , M. Terrones2;3, J.-C. Charlier4 , X. Blase5 , B. Foley1;6 , R. Kamalakaran2, N. Grobert7 , H. Terrones3, P. M. Ajayan8 , W. Blau6 , D. Teklea
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Document Date: 2008-02-26 17:05:11

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Villeurbanne Cedex / Stuttgart / London / /

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Ref / Reduced Dimensionality Systems / /

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Trinity College / Rensselaer Polytechnic Institute / Clemson University / University of Sussex / /

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semiconductor technology / molecular hetero-junction devices / carbon network / graphitic systems / High resolution electron energy loss spectroscopy / electronic applications / low energy electronic states / energy cuto / Stable imaging / imaging / energy / /

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LDOS / DOS / Fermi / /

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University of Sussex / Trinity College Dublin / Dublin / Fullerene Science Center / National Science Foundation / Rensselaer Polytechnic Institute / NSF / National Fund for Scienti / European Union / Royal Society / Clemson University / USA Max-Planck-Institut / /

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E. Hern andez / A. Rubio / R. Haydock / V / P. Ordejon / I. Boustani / Claude Bernard / C. Goze / P. Bernier / J. A. Alonso / /

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Sussex / /

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semiconductor / accepted Feenstra algorithm / semiconductors / semiconductor technology / Spectroscopy / /

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