Milano / Si / Agrate Brianza / Lyon / Grenoble / /
Company
Lg / Complementary Metal Oxide Semiconductor / AFSID Project Partners / /
Country
Germany / Netherlands / Italy / Australia / / /
Facility
University of New South Wales / Delft University of Technology / Institute of Applied Physics / Kavli Institute of Nanoscience / /
IndustryTerm
typical device / addition energy / possible ground / silicon computing / identical devices / similar devices / metal oxide semiconductor technology / orbital quantum devices / potential energy / dimensional electron gas / electron devices / quantum information processing / typical devices / energy separation / e-beam / energy spectroscopy / energy / /
Organization
University of New South Wales / Sydney / Centre for Quantum Computation and Communication Technology / Institute of Applied Physics / School of Physics / V (V) / Delft University of Technology / Kavli Institute of Nanoscience / Cariplo Foundation / /
Person
M. Vinet / V / Gianluca Fiori / Giuseppe Iannaccone / Joseph Fourier / /
arXiv:1203.4811v1 [cond-mat.mes-hall] 21 Mar[removed]Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors Enrico Prati1 , Marco De Michielis1 , Matteo Belli1 , Simone Cocco1 , Marco Fanciulli1