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Semiconductor device fabrication / Thin film deposition / Physics / Effective mass / Solid / Matter / Condensed matter physics / Epitaxy


Photon Factory Activity Report 2008 #26 Part B7B,18A/2007G528 MODIFICATION OF ELECTRONIC STATES OF √3×√3-Ag STRUCTURE BY STRAINED Ge/Si(111) SUBSTRATE
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Document Date: 2010-01-05 10:36:04

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File Size: 315,87 KB

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Company

Ge / /

Facility

University of Tokyo / Yokohama City University / /

IndustryTerm

energy resolution / nano-electronics applications / photon-energy / electron gas / /

OperatingSystem

Fermi / /

Organization

University of Tokyo / Institute for Solid State Physics / Graduate School / City University / /

Position

RT / /

Technology

spectroscopy / /

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