![Technology / Electronic engineering / High-k dielectric / Transistors / Oxide / Chemical vapor deposition / Vacuum / Photoemission spectroscopy / Chemistry / Semiconductor device fabrication / Physics Technology / Electronic engineering / High-k dielectric / Transistors / Oxide / Chemical vapor deposition / Vacuum / Photoemission spectroscopy / Chemistry / Semiconductor device fabrication / Physics](https://www.pdfsearch.io/img/14d5c1c6cfab193563bb4c7f1ffbd034.jpg) Date: 2010-01-05 10:36:05Technology Electronic engineering High-k dielectric Transistors Oxide Chemical vapor deposition Vacuum Photoemission spectroscopy Chemistry Semiconductor device fabrication Physics | | Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopyAdd to Reading ListSource URL: pfwww.kek.jpDownload Document from Source Website File Size: 493,09 KBShare Document on Facebook
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