Photon Factory Activity Report 2008 - 2C-N - Document - PDFSEARCH.IO

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Date: 2010-01-05 10:36:05 Technology Electronic engineering High-k dielectric Transistors Oxide Chemical vapor deposition Vacuum Photoemission spectroscopy Chemistry Semiconductor device fabrication Physics		Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopy Add to Reading List Source URL: pfwww.kek.jp Download Document from Source Website File Size: 493,09 KB Share Document on Facebook

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