BS170 MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description - 2N7000 - Document - PDFSEARCH.IO

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	BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Add to Reading List Document Date: 2013-03-19 05:27:19 Open Document File Size: 1,27 MB Share Result on Facebook Company Fairchild Semiconductor Corporation / / Organization PD V / / Person Dynamic Characteristics Ciss / Gate - Body Leakage / / Position 200mA gFS Forward / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General / Forward / / Technology DMOS technology / / URL www.fairchildsemi.com / / SocialTag Transistor Depletion and enhancement modes Field-effect transistor MOSFET 2N7000 Threshold voltage Fairchild Semiconductor Electrical engineering Technology Electromagnetism

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General DescriptionAdd to Reading List