<--- Back to Details
First PageDocument Content
Semiconductor devices / Computer memory / Threshold voltage / Gate oxide / Integrated circuits / Field-effect transistor / Transistor / Floating Gate MOSFET / Coulomb blockade / Electrical engineering / Electronics / Electronic engineering
Date: 2006-08-19 17:00:54
Semiconductor devices
Computer memory
Threshold voltage
Gate oxide
Integrated circuits
Field-effect transistor
Transistor
Floating Gate MOSFET
Coulomb blockade
Electrical engineering
Electronics
Electronic engineering

Add to Reading List

Source URL: www.princeton.edu

Download Document from Source Website

File Size: 385,11 KB

Share Document on Facebook

Similar Documents

Semiconductor device fabrication / Microtechnology / Etching / Plasma processing / Chemical milling / Isotropic etching / Plasma etching / Microelectromechanical systems / Buffered oxide etch

High-Aspect Ratio Deep Sub-Micron α-Si Gate Etch Process Control H.-M. Park, T. L. Brock, D. Grimard, J. W. Grizzle and F. L. Terry, Jr University of Michigan 195th Spring Meeting of ECS

DocID: 1p1ER - View Document

Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou

DocID: 1n88n - View Document

Semiconductor devices / Computer memory / Threshold voltage / Gate oxide / Integrated circuits / Field-effect transistor / Transistor / Floating Gate MOSFET / Coulomb blockade / Electrical engineering / Electronics / Electronic engineering

PDF Document

DocID: 18prs - View Document

Thin film deposition / Electronic engineering / High-k dielectric / Transistors / Ceramic materials / Gate dielectric / Atomic layer deposition / Annealing / Equivalent oxide thickness / Chemistry / Materials science / Electromagnetism

Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir

DocID: 1824D - View Document

Semiconductor device fabrication / Superhard materials / Transistors / Ceramic materials / Atomic layer deposition / High-k dielectric / Ruthenium(IV) oxide / Silicon dioxide / Titanium nitride / Chemistry / Matter / Electronic engineering

Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied

DocID: 17ZrS - View Document