<--- Back to Details
First PageDocument Content
Computer memory / Computing / Computer hardware / Electronic engineering / Floating-gate MOSFET / Non-volatile memory / Static random-access memory / Memory cell / Random-access memory / Self-aligned gate / CMOS / Reading
Date: 2012-03-02 14:05:54
Computer memory
Computing
Computer hardware
Electronic engineering
Floating-gate MOSFET
Non-volatile memory
Static random-access memory
Memory cell
Random-access memory
Self-aligned gate
CMOS
Reading

SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

Add to Reading List

Source URL: ethw.org

Download Document from Source Website

File Size: 350,19 KB

Share Document on Facebook

Similar Documents

Ultra-low power FinFET based SRAM cell employing sharing current concept

Ultra-low power FinFET based SRAM cell employing sharing current concept

DocID: 1qOFd - View Document

SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

SESSION IX: STATIC AND NONVOLATILE MEMORIES THAM 9.6: A 256-Bit Nonvolatile Static RAM Eli Harari, Lawrence Schmitz, Bruce Troutman and Samuel wang Hughes Aircraft Co.

DocID: 1qoQu - View Document

Chapter 6  The Memory Hierarchy To this point in our study of systems, we have relied on a simple model of a computer system as a CPU that executes instructions and a memory system that holds instructions and data for th

Chapter 6 The Memory Hierarchy To this point in our study of systems, we have relied on a simple model of a computer system as a CPU that executes instructions and a memory system that holds instructions and data for th

DocID: 1q6Me - View Document

NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully st

NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully st

DocID: 1nv90 - View Document

Workshop Four - Framestore for an LED Array Introduction This experiment is designed to show the operation of a framestore and introduce the use of a Static Random Access Memory (SRAM). The design uses the SRAM as a fram

Workshop Four - Framestore for an LED Array Introduction This experiment is designed to show the operation of a framestore and introduce the use of a Static Random Access Memory (SRAM). The design uses the SRAM as a fram

DocID: 1cZpn - View Document