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Date: 2016-07-29 10:26:03Chemistry Matter Nitrides Transistors High-electron-mobility transistor Terahertz technology Monolithic microwave integrated circuit Gallium nitride Two-dimensional electron gas Indium aluminium nitride Synthetic diamond Indium gallium nitride | Paper Title (use style: paper title)Add to Reading ListSource URL: www.merl.comDownload Document from Source WebsiteFile Size: 668,85 KBShare Document on Facebook |
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TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In thisDocID: 1qDin - View Document | |
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Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMODDocID: 1qgif - View Document | |
Investigation of Driver Circuits for GaN HEMTs in Leaded Packages Zhan Wang, Jim Honea Yuxiang Shi, Hui LiDocID: 1pAQt - View Document |