<--- Back to Details
First PageDocument Content
Chemistry / Condensed matter physics / Electromagnetism / Charge carriers / Optoelectronics / Semiconductor device fabrication / Solar cells / Extrinsic semiconductor / Doping / Semiconductor / Intrinsic semiconductor / Gallium arsenide
Date: 2012-09-05 05:02:22
Chemistry
Condensed matter physics
Electromagnetism
Charge carriers
Optoelectronics
Semiconductor device fabrication
Solar cells
Extrinsic semiconductor
Doping
Semiconductor
Intrinsic semiconductor
Gallium arsenide

EE 121 INTRO. TO ELECTRONIC DEVICES Materials and device structures for applications in analog and digital electronics. Topics include characteristics and basic circuits for diodes, field-effect transistors, bipolar jun

Add to Reading List

Source URL: ece.mst.edu

Download Document from Source Website

File Size: 414,05 KB

Share Document on Facebook

Similar Documents

Electronic phase transitions and space charge doping in 2D materials Abhay Shukla Institut de Minéralogie, de Physique des Matériaux et de Cosmoschimie CNRS UMR 7590, Université Pierre et Marie Curie, Paris 6

Electronic phase transitions and space charge doping in 2D materials Abhay Shukla Institut de Minéralogie, de Physique des Matériaux et de Cosmoschimie CNRS UMR 7590, Université Pierre et Marie Curie, Paris 6

DocID: 1voRA - View Document

In-situ Gallium-doping for forming p+ Germanium-Tin and application in Germanium-Tin PIN photodetector Wei Wang,1 Saumitra Vajandar,2 Sin Leng Lim,2 Yuan Dong,1 Vijay Richard D’Costa,1 Thomas Osipowicz,2 Eng Soon Tok,2

In-situ Gallium-doping for forming p+ Germanium-Tin and application in Germanium-Tin PIN photodetector Wei Wang,1 Saumitra Vajandar,2 Sin Leng Lim,2 Yuan Dong,1 Vijay Richard D’Costa,1 Thomas Osipowicz,2 Eng Soon Tok,2

DocID: 1vnU6 - View Document

THE WORLD ANTI-DOPING CODE  INTERNATIONAL STANDARD  PROHIBITED LIST

THE WORLD ANTI-DOPING CODE INTERNATIONAL STANDARD PROHIBITED LIST

DocID: 1vijk - View Document

有機半導体関連セミナー  講師:Prof. Antoine Kahn (Princeton University, USA) 題目:Impact of Doping-Induced Trap Filling on Charge Carrier Mobilityand Device Performance 日時:2013 年 1 月 23 日(

有機半導体関連セミナー 講師:Prof. Antoine Kahn (Princeton University, USA) 題目:Impact of Doping-Induced Trap Filling on Charge Carrier Mobilityand Device Performance 日時:2013 年 1 月 23 日(

DocID: 1vbuQ - View Document

Will field effect experiments permit to circumvent the drawbacks of chemical doping in correlated electron systems? A. Dooglav I. Mukhamedshin J. Bobroff

Will field effect experiments permit to circumvent the drawbacks of chemical doping in correlated electron systems? A. Dooglav I. Mukhamedshin J. Bobroff

DocID: 1v5Ul - View Document