F. D. Auret S. A. / T. C. Damen S. P. / T. Sekiguchi Nanomaterials Laboratory / A. Alba Garcia L. D. A. / Scientific Production Company / Risø National Laboratory / /
Country
Japan / Denmark / /
Currency
USD / Peso / / /
Event
Product Issues / /
Facility
Japan Atomic Energy Research Institute / T. Ohdaira National Institute of Advanced Industrial Science / National Institute of Advanced Industrial Science / H. Naramoto Advanced Science Research Center / National Institute / /
IndustryTerm
energy range / incident positron energy / incident positron energy range / large exciton binding energy / shortwavelength optoelectronic devices / energy resolution / electron-beam energy / energy / /
OperatingSystem
DOS / /
Organization
National Institute for Materials Science / Japan R. Suzuki and T. Ohdaira National Institute of Advanced Industrial Science and Technology / Japan Atomic Energy Research Institute / National Institute of Advanced Industrial Science and Technology / Z. Q. Chen / * A. Kawasuso / Y. Xu / and H. Naramoto Advanced Science Research Center / /
Person
F. Tuomisto / V / E. Van Nostrand / Hiroshi Harima / / /
Position
Professor / /
Product
crystals / /
ProvinceOrState
New Hampshire / /
Technology
radiation / laser / av / semiconductors / lasers / Technology of Japan.24 The / spectroscopy / simulation / recombination / /
PHYSICAL REVIEW B 71, 115213 共2005兲 Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam Z. Q. Chen,* A. Kawasuso, Y. Xu, and H. Naramoto Advanced Science Research Center, Japan Atomic Energy