World Scientific / F. D. Auret S. A. / T. C. Damen S. P. / T. Sekiguchi Nanomaterials Laboratory / Philips / Shimizu / Thin Solid Films / Ge / Scientific Production Company / /
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Japan / Singapore / /
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USD / / /
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Product Issues / /
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American Institute of Physics Downloaded / Japan Atomic Energy Research Institute / American Institute of Physics / T. Ohdaira National Institute of Advanced Industrial Science / National Institute of Advanced Industrial Science / H. Naramoto Advanced Science Research Center / National Institute / /
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oxygen vacancy site / oxygen site / low energy / positron energy / incident energy / energy range / semiconductor devices / incident positron energy / chemical effects / large exciton binding energy / energy resolution / ion energy / electron-beam energy / energy / /
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American Institute of Physics Downloaded / National Institute for Materials Science / American Institute of Physics / A. Kawasuso / Y. Xu / and H. Naramoto Advanced Science Research Center / Japan R. Suzuki and T. Ohdaira National Institute of Advanced Industrial Science and Technology / Japan Atomic Energy Research Institute / National Institute of Advanced Industrial Science and Technology / Ministry of Education / /
JOURNAL OF APPLIED PHYSICS 97, Production and recovery of defects in phosphorus-implanted ZnO Z. Q. Chen,a) A. Kawasuso, Y. Xu, and H. Naramoto Advanced Science Research Center, Japan Atomic Energy Researc