Annealing Study of Defects in Epitaxial SiC Layers Induced by He and Electron Irradiation A.Kawasuso , F.Redmann , R.Krause-Rehberg , P. Sperr , G. Kögel , W.Triftshäuser , M. Weidner , Th.Frank , G.Pensl and H.Itoh 1

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Date: 2006-06-15 12:02:19		Annealing Study of Defects in Epitaxial SiC Layers Induced by He and Electron Irradiation A.Kawasuso , F.Redmann , R.Krause-Rehberg , P. Sperr , G. Kögel , W.Triftshäuser , M. Weidner , Th.Frank , G.Pensl and H.Itoh 1 Add to Reading List Source URL: positron.physik.uni-halle.de Download Document from Source Website File Size: 186,88 KB Share Document on Facebook