80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide hafnium dioxide - Aluminium gallium arsenide - Document - PDFSEARCH.IO

First Page	Meta Content
	80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide Add to Reading List Document Date: 2015-10-01 12:01:02 Open Document File Size: 836,62 KB Share Result on Facebook

80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxideAdd to Reading List