thickness vacuum permittivity relative permittivity average pair-creation energy / carrier concentration / electronic device / permittivity relative permittivity average pair-creation energy electric field / space charges energy acceptor ionisation energy / average pair-creation energy / high carrier mobilities / diamond devices / ionisation thermal energy unity-vector / electronic applications / diamond-based electronic device / detector applications / band electron density intrinsic carrier concentration hole density / chemical vapour deposition / diamond chemical vapour deposit / valence band bandgap energy threshold / density intrinsic carrier concentration hole density elementary charge / energy / /
MusicGroup
DOS / Fermi / Energy / /
OperatingSystem
DOS / Fermi / /
Organization
Electricity Department of Engineering Sciences Uppsala / NC ND / /
Person
Ion Mass Spectrometry / J. Isberg / D. J. Twitchen / A. Hallén / J. Hajdu / A. Schöner / M. Linnarsson / S. Majdi / /
Position
CVD DC DOS FWHM HPHT IR RT / D. J. / /
Product
High injection / Low injection / /
PublishedMedium
Semiconductor Science and Technology / Journal of Applied Physics / /
Electronic Properties of Diamond Markus Gabrysch