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Materials science / Leptons / Quantum electrodynamics / Semiconductor device fabrication / Thermally stimulated current spectroscopy / Ion implantation / Positron annihilation spectroscopy / Positron / Electron / Physics / Chemistry / Spectroscopy


Applied Radiation and Isotopes±45 www.elsevier.com/locate/apradiso Investigation of defects in high-energy heavy ion implanted GaAs
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Document Date: 2003-02-14 03:32:39

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City

London / Lanzhou / New York / Plenum / /

Company

Elsevier Science Publisher BV / Ge / Elsevier Science Ltd. / mCi / /

Country

Japan / Netherlands / China / /

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Facility

Hall e€ect / Republic of China Institute of Modern Physics / Wuhan University / Tohoku University / /

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IndustryTerm

minority-carrier lifetime / excess energy / photon energy / positron binding energy / shallow trapping site / energy range / carrier compensation / high energy heavy-ion / High-energy / vacancy site / energy resolution / high-energy heavy ion / ion energy / e-irradiated / high energy heavy ion irradiation / energy / /

Organization

National Natural Science Foundation of China / dnb / Chinese Academy of Science / Tohoku University / Department of Physics / Wuhan University / Wuhan / People's Republic of China Institute of Modern Physics / /

Person

Z.Tang / /

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Position

Corresponding author / /

Product

B52 / /

ProvinceOrState

New York / /

Region

North Holland / /

Technology

semiconductor / Radiation / semiconductors / Spectroscopy / simulation / recombination / /

URL

www.elsevier.com/locate/apradiso / /

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