Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B

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Date: 2013-10-31 05:07:25 Chemistry Matter Nanoelectronics Nanowire Indium antimonide Metalorganic vapour phase epitaxy Indium Drop Vaporliquidsolid method		Supplementary Material Section 1: E-beam lithography, gold deposition and lift-off were used to prepare the 25x25 gold droplet arrays. “Standard” InP-InAs stems were grown in the MOVPE reactor at 420°C. InP(111)B Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Download Document from Source Website File Size: 3,98 MB Share Document on Facebook

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