Terminal Ballistic Junction Devices / University of Manchester Institute of Science / L terminal / /
IndustryTerm
Conventional semiconductor devices / ballistic device / roomtemperature ballistic devices / simplest mesoscopic ballistic device / lower chemical potentials / ballistic semiconductor device / carrier concentration / carrier reservoirs / much smaller devices / ballistic devices / metal gate / nonlinear device / electron gas / semiconductor device / higher energy electrons / wet chemical etching / higher carrier density / carrier reservoir / semiconductor technologies / quantumeffect-based nanoelectronic devices / speciļ¬c device / mesoscopic semiconductor device / ballistic electron devices / macroscopic semiconductor device / minority carrier diffusion / diffusive device / basic device / lateral hot ballistic electron devices / chemical potential / macroscopic device / material systems / possible real applications / conventional vertical device / carrier density / conventional semiconductor device / room-temperature ballistic devices / electron transport device / e-beam / thermal energy / individual devices / nanoimprint technology / biomolecular separation devices / rst device / chemical potentials / mesoscopic device / electron energy / higher chemical potentials / higher sheet carrier density / lowered carrier concentration / /
OperatingSystem
Fermi / /
Organization
University of Manchester Institute of Science and Technology / Department of Electrical Engineering and Electronics / Japan Society of Applied Physics / /
Encyclopedia of Nanoscience and Nanotechnology