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Charge carriers / Semiconductor device fabrication / Energy harvesting / Ohmic contact / Extrinsic semiconductor / N-type semiconductor / Semiconductor / Band bending / Doping / Physics / Condensed matter physics / Materials science


Document Date: 2001-09-05 10:13:25

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City

Arlington / /

Company

CBs / CSC / Nc Nv / /

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pence / /

Facility

Photoelectrochemistry Krishnan Rajeshwar The University of Texas / /

IndustryTerm

energy levels / photoelectrochemical applications / semiconductor energy band model / localized chemical picture / metal / oil embargo / band gap energy / photoelectrochemical devices / molecular orbital energy levels / energy storage / chemical control / low carrier concentrations / energy bands / semiconductor band gap energy / solution energy levels / occupiable energy level / clean energy sources / metal oxide / intrinsic carrier concentrations / energy conversion possibilities / energy 3p / redox energy levels / energy eigenstates / chemical bond / energy band gap / electron energy levels / optical band gap energy / heterogeneous metal-electrolyte interfaces leading / energy crisis / solvent reorganization energy / carrier concentrations / electronics / electronic energy levels / semiconductor energy bands / semiconductor energy levels / homogeneous systems / metal electrode bard060100 / chemical terms / crude chemical analogy / molecular systems / metal case / electron energy / electron energy distribution / energy / /

MusicGroup

Energy / /

OperatingSystem

Fermi / /

Organization

University of Texas at Arlington / European Central Bank / /

Position

author / mediator / RT / representative / /

ProvinceOrState

Texas / North Dakota / /

Technology

semiconductor / semiconductors / dielectric / Electrochemistry / /

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