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Heterojunction bipolar transistor / Bipolar junction transistor / Transistor / Heterojunction / Silicon-germanium / Common emitter / Gummel plot / Electronics / Technology / Electromagnetism


InAlAsSb=InGaSb double heterojunction bipolar transistor R. Magno, J.B. Boos, P.M. Campbell, B.R. Bennett, E.R. Glaser, B.P. Tinkham, M.G. Ancona, K.D. Hobart, D. Park and N.A. Papanicolaou
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Document Date: 2013-11-22 14:28:49

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City

Hobart / Antimony / /

Company

Shanabrook B.V. / Naval Research Laboratory / /

Country

United States / /

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IndustryTerm

electronic devices / carrier concentration / speed low-power electronic devices / /

MusicGroup

D.H. / InxAl1 / /

Organization

Defense Advanced Research Projects Agency / office of Naval Research / /

Person

Lester Eastman Conf / /

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Position

collector / InxAl1-xAsySb1-y collector / /

Technology

semiconductor / bipolar transistor / lithography / semiconductors / fabricated using optical lithography / /

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