![Electronic engineering / Semiconductor devices / Insulated gate bipolar transistor / MOSFET / Power semiconductor device / Field-effect transistor / Gallium nitride / High electron mobility transistor / Ikawa / Chemistry / Electronics / Power electronics Electronic engineering / Semiconductor devices / Insulated gate bipolar transistor / MOSFET / Power semiconductor device / Field-effect transistor / Gallium nitride / High electron mobility transistor / Ikawa / Chemistry / Electronics / Power electronics](https://www.pdfsearch.io/img/6013b4afc5266483c1f5b43678032211.jpg)
| Document Date: 2015-05-22 13:46:38 Open Document File Size: 109,83 KBShare Result on Facebook
Company Fuji Electric Co. Ltd. / / Country Japan / Australia / Taiwan / Germany / United Kingdom / / Organization Nat'l United Univ. / Univ. of Warwick / l United Univ. / Univ. of Erlangen-Nuremberg / / Person Ting Huang / Bernhard Piepenbreier / Jennifer Lautner / / Position GaN Gate Driver / / ProvinceOrState New South Wales / / Region South Wales / / Technology High Power Density Technology / Semiconductor Devices / /
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