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Date: 2003-05-07 14:01:39Power electronics Semiconductor devices Insulated-gate bipolar transistor Transistor Bipolar junction transistor | A CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE G. E. Leyh, SLAC, Menlo Park CAAbstract MegawaAdd to Reading ListSource URL: www-group.slac.stanford.eduDownload Document from Source WebsiteFile Size: 345,67 KBShare Document on Facebook |