Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination Jonathan W. Kimball, Member Patrick L. Chapman, Member Grainger Center for Electric Machinery and Electromechanics

First Page		Document Content
Date: 2006-11-14 18:07:24 Electric power conversion Power electronics Insulated-gate bipolar transistor Power semiconductor device Buck converter Field-effect transistor MOSFET Active rectification Power inverter Rectifier Diode Gate driver		Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination Jonathan W. Kimball, Member Patrick L. Chapman, Member Grainger Center for Electric Machinery and Electromechanics Add to Reading List Source URL: www.jonathankimball.com Download Document from Source Website File Size: 355,95 KB Share Document on Facebook

	TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this DocID: 1qDin - View Document
	Evaluating Conduction Loss of a Parallel IGBT-MOSFET Combination Jonathan W. Kimball, Member Patrick L. Chapman, Member Grainger Center for Electric Machinery and Electromechanics DocID: 1pspk - View Document
	Microsoft Word - pesc 04 2.doc DocID: 1pejh - View Document
	TDPS250E2D2 Rev 1.4 Application Note: TDPS250E2D2 All-in-One Power Supply Evaluation Board 1. Introduction DocID: 1oA20 - View Document
	S6AP413A ASSP 4ch DCDC Converter with I2C Interface and Internal SW FETs Data Sheet (Full Production) Notice to Readers: This document states the current technical specifications regarding the Spansion DocID: 186Xl - View Document