Date: 2014-01-07 05:50:19Electronics Semiconductor devices Insulated gate bipolar transistor Power semiconductor device H bridge MOSFET Transistor Field-effect transistor Inverter Electrical engineering Electromagnetism Power electronics | | © 2013 IEEE Proceedings of the 14th IEEE Workshop on Control and Modeling for Power Electronics (COMPEL 2013), Salt Lake City, USA, June 23-26, 2013. Mixed MOSFET-IGBT Bridge for High-Efficient Medium-Frequency Dual-Document is deleted from original location. Use the Download Button below to download from the Web Archive.Download Document from Web Archive File Size: 4,65 MB
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