A. Atwater Thomas J. Watson Laboratories / Verlag GmbH & Co. KGaA / Ge / WILEY-VCH Verlag GmbH & Co. KGaA / S. K. Shukla N. A. / ZnSnN2 Semiconductor / /
Currency
pence / / /
Facility
Applied Physics California Institute of Technology Pasadena / Resnick Sustainability Institute / /
IndustryTerm
lower formation energy / calculated formation energy / chemical potential regions / metal-like high electron concentration / energy cutoff / lowest formation energy / defect formation energy / positive formation energy / formation energy / energy range / energy change / negative formation energy / chemical potential / interstitial site / chemical potentials / lowest-energy charge state / energy / metal / larger formation energy / optoelectronic devices / gas molecule state / transition energy level / chemical diversity / chemical potential space / higher energy / elemental metal phases / oxygen chemical potential / higher energy conduction band / transition energy levels / /
OperatingSystem
Fermi / /
Organization
U.S. Department of Energy / National Science Foundation / Resnick Sustainability Institute / office of Science / L.-W. Wang Joint Center for Artificial Photosynthesis / Joint Center for Artificial Photosynthesis / Applied Physics California Institute of Technology Pasadena / /
Person
Lin-Wang Wang / Syposium Proceedings / Harry A. Atwater / P. Torelli / N. Feldberg / R. J. Reeves / Lawrence Berkeley / R. S. Goldman / B. Keen / /
Position
T. D. / D. J. / /
ProvinceOrState
SnZn / California / /
PublishedMedium
Journal of Electronic Materials / Advanced Materials / /
Phase Stability and Defect Physics of a Ternary ZnSnN2 Semiconductor: First Principles Insights