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Semiconductor devices / Nitrides / Inorganic compounds / Multijunction photovoltaic cell / Indium gallium arsenide / Band gap / Gallium arsenide / Indium gallium phosphide / Heterojunction / Chemistry / Solar cells / Energy conversion


APPLIED PHYSICS LETTERS 98, 093502 共2011兲 Wide-band-gap InAlAs solar cell for an alternative multijunction approach Marina S. Leite,1,a兲 Robyn L. Woo,2 William D. Hong,2 Daniel C. Law,2 and Harry A. Atwater1 1
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Document Date: 2011-03-25 11:58:32


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