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Semiconductor devices / Electronic design / Packaging / Reliability / Semiconductor device fabrication / Semiconductors / Transistor / Gallium nitride / Light-emitting diode / Chemistry / Technology / Electronic engineering


High Temperature, High Power RF Life Testing of GaN on SiC RF Power Transistors Brian Barr, Engineering Manager and Dan Burkhard, Quality Manager M/A-COM Technology Solutions RF Power Products Group, Torrance CA Abstract
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Document Date: 2014-03-04 22:47:38


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File Size: 1.010,12 KB

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Company

M/A-COM Technology Solutions / Dan Burkhard / M/A-COM Technology Solutions RF Power Products Group / /

IndustryTerm

power semiconductor technologies / semiconductor technology / large periphery device / satellite uplink / power device solutions / packaged transistor product / technology obsolescence / industrial and medical applications / metal migration / reliability systems / semiconductor technologies / power device technology / semiconductor devices / power semiconductor chip / power semiconductor devices / activation energy / energy / /

Position

Quality Manager / generally accepted failure driver / /

Product

SiBJT devices / SiBJT / /

ProgrammingLanguage

DC / ML / /

Technology

semiconductor / Microwave / GaN power semiconductor chip / Silicon Carbide semiconductor technology / Torrance CA Abstract As GaN power device technology / promising technology / previous semiconductor technologies / power semiconductor technologies / semiconductor devices / /

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