For InN / NARROW BANDGAP OF InN / AlN GaN InN / A. InN / American Institute / American Institute of Physics / University of California / B. InN / /
IndustryTerm
power law fits / acceptor binding energy / photon energy / orbital energy / energy gap / energy range / low energy side / interaction energy / chemical trends / electronic and optoelectronic devices / monotonic chemical trend / energy difference / metal-organic chemical vapor deposition / power law dependence / free carrier absorption / energy / power law index / energy position / peak energy / free carrier concentrations / carrier dynamics / related / energy gaps / carrier scattering / higher energy / laser technologies / power law / state lighting technology / activation energy / space / /
MusicGroup
III / InN / /
OperatingSystem
Fermi / /
Organization
American Institute of Physics / Department of Materials Science and Engineering / University of California / Berkeley / U.S. Securities and Exchange Commission / International Commission on Illumination / Division of Materials Sciences / /
Person
Lawrence Berkeley / Also / /
Position
Prime Minister / as55 Author / Author / /
Product
M-16 / /
ProvinceOrState
California / /
Technology
semiconductor / Radiation / aV / laser technologies / chemical vapor deposition / semiconductors / state lighting technology / dielectric / optoelectronics / spectroscopy / recombination / /
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