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Chemistry / Matter / Crystallographic defects / Optical materials / Superhard materials / Nitrides / Gallium nitride / Light-emitting diode / Quantum efficiency / Dislocation / IQE / Stacking fault


Enhanced light output power and growth mechanism of GaN-based light-emitting diodes grown on cone-shaped SiO2 patterned template. 學生:陳政勤 學號:
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Document Date: 2013-09-24 02:37:46


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