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Zinc oxide / Wurtzite crystal structure / Pulsed laser deposition / Gallium nitride / Center of Excellence in Nanotechnology at AIT / Enhancement or quenching of QD /  Q-wire and QW radiations / Chemistry / Inorganic compounds / Ultraviolet radiation


Applied Surface Science–380 www.elsevier.com/locate/apsusc Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition Z.Q. Chena,*, S. Yamamotoa, A. Kawasusoa,
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Document Date: 2005-04-08 22:17:58


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City

Porto / Berlin / /

Company

Philips / Elsevier B.V. / /

Country

Japan / /

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Facility

National Institute / /

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IndustryTerm

short wavelength optoelectronic devices / large exciton binding energy / incident positron energy / acoustic wave devices / positron incident energy / /

Organization

National Institute for Materials Science / Japan Atomic Energy Research Institute / /

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Position

Corresponding author / /

Technology

radiation / spectroscopy / laser / semiconductors / X-ray / recombination / /

URL

www.elsevier.com/locate/apsusc / /

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