phys. stat. sol. (c) 4, No. 10, 3646– DOIpsscIon species dependence of the implantation-induced defects in ZnO studied by a slow positron beam Z. Q. Chen∗1 , M. Maekawa2 , A. Kawasu

First Page		Document Content
Date: 2007-11-11 12:22:08 Ion implantation Zinc oxide Annealing Center of Excellence in Nanotechnology at AIT Chemistry Semiconductor device fabrication Materials science		phys. stat. sol. (c) 4, No. 10, 3646– DOIpsscIon species dependence of the implantation-induced defects in ZnO studied by a slow positron beam Z. Q. Chen∗1 , M. Maekawa2 , A. Kawasu Add to Reading List Source URL: www.geocities.jp Download Document from Source Website File Size: 201,45 KB Share Document on Facebook

	Chemistry_BS_Biochemistry.pdf DocID: 1xUCR - View Document
	Chemistry_BS_Environmental Chemistry.pdf DocID: 1xUxX - View Document
	Chemistry, BA "DBEFNJD.BQ General DocID: 1xU5A - View Document
	The Next Bigly Thing -- Torsion Chemistry 80% Faster Reactions, 50% Less Energy with "Activators" by Robert A. Nelson Science has bestowed many wonderments upon us, but the Return-On-Investment is quickly diminishing (th DocID: 1xTUH - View Document
	Chemistry_BS_General BS to MS Accelerated Pathway.pdf DocID: 1xTpY - View Document