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Zinc oxide / Annealing / Zinc / Electrical resistivity and conductivity / Heat treating / Center of Excellence in Nanotechnology at AIT / Chemistry / Ceramic materials / Ultraviolet radiation


IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 4, APRIL[removed]The Resistivity of Zinc Oxide Under Different Annealing Configurations and Its Impact on
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Document Date: 2014-10-10 02:44:41


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Matsuda / Partner State Key Laboratory / Thin Solid Films / I. I NTRODUCTION Z INC / Corning / Optoelectronics Technologies / /

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Partner State Key Laboratory / Hong Kong University of Science / Stanford University / Soochow University / Massachusetts Institute of Technology / /

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lower formation energy / thermal processing / metal oxide materials / metal oxides / micro-fabrication technology / lower processing temperature / organic lightemitting diode display technology / plasma-enhanced chemical vapor deposition / amorphous oxide semiconductor thin-film transistor devices / /

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Hong Kong University of Science and Technology / Hong Kong / Center for Integrated Systems / Stanford University / Soochow University / Massachusetts Institute of Technology / Department of Electronic and Computer Engineering / /

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C. S. Xue / M. Liu / G. Van de Walle / C. Yang / H. Z. Zhuang / M. Wong / J. D. Ye / V / Lei Lu / Z. Ye / J. Huang / S. C. Lai / B. Y. Man / X. Q. Wei / /

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semiconductor / dielectric / micro-fabrication technology / organic lightemitting diode display technology / radio frequency / Digital Object Identifier / technology of thin-film transistor / chemical vapor deposition / /

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