4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFET - Channel length modulation - Document - PDFSEARCH.IO

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	4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFET Add to Reading List Document Date: 2012-11-19 02:09:50 Open Document File Size: 188,97 KB Share Result on Facebook Position Tilted Trench Sidewalls Assistant / / SocialTag MOSFET Field-effect transistor Transistor Threshold voltage JFET Power electronics Power MOSFET Channel length modulation Electrical engineering Technology

4H-SiC Trench MOSFETs with High Channel Mobility by using Tilted Trench Sidewalls Assistant Prof. Hiroshi YANO (NAIST) 1. Trench MOSFETAdd to Reading List