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Electronic design / MOSFET / Threshold voltage / Field-effect transistor / CMOS / Power electronics / Power MOSFET / Channel length modulation / Electrical engineering / Electronic engineering / Electromagnetism


Compact modeling for Multiple-Gate SOI MOSFETs B. Iñiguez*, H. A. Hamid*, D. Jiménez** and J. Roig*** *
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Document Date: 2010-03-19 15:54:03


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File Size: 534,42 KB

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City

Barcelona / /

Company

Quantum / /

Country

Spain / /

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Facility

Campus UAB / /

IndustryTerm

1D electron gas / /

Organization

Universitat Autònoma de Barcelona / Universitat Rovira i Virgili / /

Position

conductor / /

Technology

CMOS technology / /

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