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Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition Yi-Hsien Lee#, Xin-Quan Zhang#, Wenjing Zhang, Mu-Tung Chang, Cheng-Te Lin, Kai-Di Chang,Ya-Chu Yu, Jacob Tse-Wei Wang, Chia-Seng Chang, Lain-Jong
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Document Date: 2012-02-26 20:01:47


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File Size: 1,17 MB

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City

Taipei / /

Company

J. Adjaye A. E. / Cox / R. F. Frindt A. S. / The star / ACS / /

Country

Taiwan / Taichung / /

Currency

pence / /

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Facility

Tunghai University / Taiwan Institute of Physics / Tsung-Wu Lin* Institute / Dr. C. S. Chang Institute of Physics / Port Rd. / Dr. L.-J. Li* Institute of Atomic / /

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IndustryTerm

metal / transition metal dichalcogenides / crystalline metal substrates / energy calibrations / chemical compositions / lower carrier mobility / metal dichalcogenides / chemical bonding states / typical transition metal dichalcogenides / energy dispersive spectrometer / Chemical vapor deposition / microscopic systems / hydrazine solution / Chemical configurations / rGO-hydrazine solution / rGO solution / carrier mobility / energy / /

Organization

National Science Council Taiwan / T.-W. Lin* Department of Chemistry / Taiwan Department of Chemistry / Tunghai University / C. S. Chang Institute of Physics / L.-J. Li* Institute of Atomic and Molecular Sciences / Institute of Atomic and Molecular Sciences / U.S. Securities and Exchange Commission / Institute of Physics / /

Person

Cheng-Te Lin / Dalton Trans / Lain-Jong Li / Sol-Gel Sci / Xin-Quan Zhang / E. Wasserman / Nat / Jacob Tse-Wei Wang / Kai-Di Chang / J. Brivio / V / W. Zhang / T. J. Booth / V / Ya-Chu Yu / Hsien Lee / /

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Position

D. J. / /

Technology

semiconductor / laser / X-ray / spectroscopy / optoelectronics / Field-effect transistor / photolithography / CVD / Chemical Vapor Deposition / /

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