Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, );

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Date: 2013-02-01 05:11:43		Solid phase epitaxy of ultra-shallow Sn implanted Si observed using highresolution Rutherford backscattering spectrometry T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz Citation: Appl. Phys. Lett. 101, ); Add to Reading List Source URL: www.ciba.nus.edu.sg Download Document from Source Website File Size: 1,00 MB Share Document on Facebook