| Document Date: 2012-10-10 05:36:31
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City Regensburg / / Company ACS / / Country Germany / United States / / Currency USD / / / Facility American Institute of Physics V Downloaded / American Institute of Physics / / IndustryTerm optical near-field imaging / potential applications / silicon free-carrier scattering / metal markers / liquid-nitrogen-cooled charge-coupled device / chemical exfoliation14 / opto-electronics / energy / / Organization American Institute of Physics / C. Schu Institut f€ / / Person J. C. Meyer / V / Nat / G. Pourtois / V / J. Brivio / V / T. J. Booth / V / A. M. Goossens / V / / PublishedMedium APPLIED PHYSICS LETTERS / / Technology semiconductor / laser / dielectric / spectroscopy / integrated circuits / used scanning Raman spectroscopy to study the interlayer shear mode / / URL http /
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Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes G. Plechinger, S. Heydrich, J. Eroms, D. Weiss, C. Schüller et al. Citation: Appl. Phys. Lett. 101, [removed]); doi: [removed] View onl