| Document Date: 2010-07-06 19:06:21
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City Pasadena / / Company A. Atwater Thomas J. Watson Laboratories / BP / / Facility Applied Physics California Institute of Technology / / IndustryTerm hot-wire chemical vapor deposition / low temperature epitaxial silicon thin film photovoltaic devices / twodimensional device / carrier collection / epitaxial chemical vapor deposition / carrier concentration / bulk intragranular carrier recombination / bulk minority carrier diffusion length / carrier statistics / silicon chemical vapor deposition epitaxy / reduced bulk minority carrier lifetime / plasma-enhanced chemical vapor deposition / numerical device / minority carrier current flow / carrier transport / doped devices / microscopic device / degraded carrier mobility / carrier types / carrier mobility / low processing temperatures / / Organization California Institute of Technology / / Person Michael D. Kelzenberg / Daniel B. Turner-Evans / / Product Synopsis TCAD / / Technology epitaxial silicon / SIMULATION / RECOMBINATION / chemical vapor deposition / /
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EFFECTS OF BULK AND GRAIN BOUNDARY RECOMBINATION ON THE EFFICIENCY OF COLUMNAR-GRAINED CRYSTALLINE SILICON FILM SOLAR CELLS Michael G. Deceglie, Michael D. Kelzenberg, and Harry A. Atwater Thomas J. Watson Laboratories o