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Bipolar junction transistor / Transistor / Electronics / Early effect / Biasing / Common emitter / Logic families / Integrated circuits / 2N2222 / Electrical engineering / Electronic engineering / Single-stage transistor amplifiers


\\ Proc. IEEE 2004 Int. Conference on Microelectronic Test Structures, Vol 17, March[removed]
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Document Date: 2008-02-25 14:57:43

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Munich / /

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C. G. Linnenbank / I I I! AE / Germany Infineon Technologies AG / Infmeon Technologies AG / HP / /

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IndustryTerm

device processing / pm smart power technology / select devices / bipolar device / /

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Isis / /

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Jan Einfeld / Matthias Steche / Ute Kollmer / Ulrich Schaper / /

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same collector / Prime Minister / collector / extracted collector / %pm / /

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LabVIEW / /

Technology

bipolar transistor / 0.5 pm smart power technology / simulation / Integrated Circuits / /

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