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Semiconductor devices / Compound semiconductors / Inorganic compounds / Indium gallium arsenide / Gallium arsenide / Indium gallium phosphide / Multijunction photovoltaic cell / Metalorganic vapour phase epitaxy / Gallium nitride / Chemistry / Solar cells / Energy conversion


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Document Date: 2014-02-15 13:17:10

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City

Berlin / Ilmenau / /

Company

UPS / Ge / GaP / /

Country

Germany / /

/

Facility

MOVPE reactor / Institute of Physics / Ilmenau University of Technology / /

IndustryTerm

solar cell-relevant breakthrough technologies / metal organic vapor phase epitaxy / minority carrier lifetime / photovoltaic energy conversion / optoelectronic devices / multigap systems / terrestrial applications / low energy electron diffreaction / minority carrier lifetime analysis / metalorganic chemical vapor deposition-grown semiconductors / opto-electronics / /

OperatingSystem

AIX / /

Organization

Ilmenau University of Technology / German Research Foundation / Institute of Physics / /

PublishedMedium

Solar Energy Materials and Solar Cells / New Journal of Physics / /

Technology

semiconductor / spectroscopy / semiconductors / recombination / III-V technologies / CVD / chemical vapor deposition / /

SocialTag