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Semiconductor devices / Compound semiconductors / Inorganic compounds / Multijunction photovoltaic cell / Indium gallium arsenide / Band gap / Gallium arsenide / Indium gallium phosphide / Gallium nitride / Chemistry / Solar cells / Energy conversion


Towards high-performance III-V solar cells on silicon H. Döscher, P. Kleinschmidt, S. Brückner, A. Dobrich, N. Szabo, K. Schwarzburg, T. Hannappel Helmholtz Center Berlin for Materials and Energy, Hahn-Meitner-Platz 1,
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Document Date: 2010-03-02 14:57:46

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Company

Ge / Thin Solid Films / /

Facility

T. Hannappel Helmholtz Center / /

IndustryTerm

pulse energy / excess carrier density / metal organic vapour phase epitaxy / solar cell-relevant breakthrough technologies / metal organic chemical vapour deposition / minority carrier lifetimes / analytic tools / photovoltaic devices / carrier density regime / chemical / energy / /

Organization

T. Hannappel Helmholtz Center Berlin / European Union / /

Technology

spectroscopy / microwave / semiconductors / III-V technologies / recombination / process control / CVD / /

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