| Document Date: 2003-02-11 04:15:29
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City London / Leipzig / New York / / Company Bulk Semiconductors / HP / Ge / / Country China / / Currency pence / / / Facility Institute of Semiconductors / Wuhan University / / / IndustryTerm metal / carrier traps / carrier concentration / energy coincidence / chemical identity / optoelectronic devices / technological processing / defect site / energy gap / high-energy side / semiconductor devices / electronic devices / carrier concentrations / chosen solution / / Organization National Natural Science Foundation of China / S.J. Wang Department of Physics / Institute of Semiconductors of China / Wuhan University / Wuhan / / Person M. Alatalo / Van Nostrand Reinhold / / / Position VP / VP complexes / Fisher / VP complex / R.N. / / Product B 47 / / ProvinceOrState New York / / Technology ALPHA / radiation / semiconductors / semiconductor devices / spectroscopy / microwave / recombination / /
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Appl. Phys. A 66, 435–Applied Physics A Materials Science & Processing Springer-Verlag 1998