High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs AlGaAs HEMT structures wer - Compound semiconductor - Document - PDFSEARCH.IO

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Date: 2009-05-08 06:40:08 Thin film deposition Industrial gases Semiconductor growth Semiconductor device fabrication Molecular beam epitaxy Gallium arsenide Liquid nitrogen High-electron-mobility transistor Water cooling Epitaxy Nitrogen Metalorganic vapour phase epitaxy		High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer Add to Reading List Source URL: www.1974eiko.co.jp Download Document from Source Website File Size: 31,85 KB Share Document on Facebook

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