Compound Semiconductor Device Laboratory - CSD lab 高頻功率氮化銦鋁氮化鎵高電子遷移率電晶體電性之改善 (利用SiN鈍化層) Development of InAlN GaN HEMT for - Compound semiconductor - Document - PDFSEARCH.IO

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Date: 2016-03-03 03:46:49		Compound Semiconductor Device Laboratory - CSD lab 高頻功率氮化銦鋁/氮化鎵高電子遷移率電晶體電性之改善 (利用SiN鈍化層) Development of InAlN/GaN HEMT for Add to Reading List Source URL: diamondprj.nctu.edu.tw Download Document from Source Website File Size: 372,86 KB Share Document on Facebook