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Semiconductor devices / Compound semiconductors / Inorganic compounds / Schottky diode / Transistor / Gallium nitride / Power semiconductor device / Flyback diode / Light-emitting diode / Chemistry / Electronic engineering / Diodes


EPE Conference, Lausanne, 1999 IXAN0041
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Document Date: 2007-04-10 20:28:00

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File Size: 213,21 KB

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City

Lausanne / Lampertheim / Boston / Trondheim / /

Company

Power Schottky Diode A. Lindemann IXYS Semiconductor GmbH / PWS Publishing Company / Diodes / /

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IndustryTerm

energy band gap / larger energy band / frequency applications / converter technology / semiconductor devices / diode chips / gallium arsenide diode chips / /

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Position

representative / forward / General / /

Technology

semiconductor / converter technology / 2.2 Chips / diode chips / lithography / chip design / gallium arsenide diode chips / 2 Technology / Recombination / same technology / semiconductor devices / /

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