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Compound semiconductors / Inorganic compounds / Optoelectronics / Integrated circuits / High electron mobility transistor / Gallium nitride / Transistor / Gallium arsenide / Silicon-germanium / Chemistry / Electronics / Semiconductor devices


4 Millimeter Wave Devices 4-1 Research Project on Millimeter-wave Semiconductor Devices Toshiaki MATSUI, Keisuke SHINOHARA, Masataka HIGASHIWAKI, and Nobumitsu HIROSE
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Document Date: 2013-11-20 20:58:24


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Si / Nitride / /

Company

Microwave Si IC Technologies / Apl / LSI / Nikkei Electronics / Communications Research Laboratory / Ge / Keywords Wireless / Fujitsu Laboratories / L. D. Nguyen A. S. / /

Facility

2.9×107 InN / Institute of Electronics / Communications Research Laboratory / /

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Organization

Institute of Electronics / Information and Communication Engineers / Multi-media and Network Society / /

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Kasai / Kasamatsu / /

Position

Senior Researcher / D. Researcher / Toshiaki MATSUI Leader / /

Product

HEMTs / SiGe-HEMTs / /

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With 400 / /

Technology

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