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Semiconductor device fabrication / Tungsten compounds / Nonmetals / Coatings / Oxide / Etching / Tungsten / Sputtering / Sputter deposition / Chemistry / Matter / Chemical elements


Removal of Hydrogenated Carbon from W-C Deposits by Microwave Oxygen Plasma Alenka Vesel, Miran Mozetič, Peter Panjan, Aleksander Drenik Jožef Stefan Institute Jamova cesta 39, SI-1000 Ljubljana, Slovenia alenka.vesel@
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Document Date: 2012-07-16 15:39:30


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City

Bovec / Ljubljana / /

Company

Physical Electronics Ind. / The AES / /

Continent

Europe / /

Country

Germany / Slovenia / /

/

Facility

Jozef Stefan Institute / /

IndustryTerm

polished stainless steel substrates / set-up device / gas flow / chemical erosion / stainless steel / stainless steel substrate / chemical composition / deposition device / flat metal oxides / oil rotary pump / chemical methods / suitable metal / energy / /

MarketIndex

case 20 / case 50 / /

Organization

Jozef Stefan Institute / /

Person

Marianne Balat / J.A. Ferreira / V / A. Litnovsky / V / Rok Zaplotnik Induktio / Peter Panjan / Aleksander Drenik Jožef / /

Position

volume flow controller / /

Product

Olympus FE-20 Digital Camera / /

ProvinceOrState

Pennsylvania / /

Technology

laser / X-ray / spectroscopy / Microwave / recombination / flash / /

SocialTag