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Results of a Si/CdTe Compton Telescope Kousuke Oonukia,b , Takaaki Tanakaa,b , Shin Watanabea , Shin’ichiro Takedaa,b , Kazuhiro Nakazawaa , Takefumi Mitania,b , Tadayuki Takahashia,b , Hiroyasu Tajimac , Yasushi Fukaz
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Document Date: 2007-09-12 00:35:10

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File Size: 1,27 MB

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City

Hiroshima / Osaka / Tokyo / /

Company

Mitsubishi / LSI / Diodes / /

Country

Norway / Japan / /

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Facility

Hiroshima University / Osaka University / University of Tokyo / /

IndustryTerm

high energy resolution / gamma-ray energy / energy range / low energy tail / incident gamma-ray energy / spectral and imaging capability / energy selection / high energy gamma-rays / readout electronics / energy resolution / imaging / energy / wide energy coverage starting / energy band / thick device / bump bonding technology / diode device / incident energy / high energy / energy threshold / high energy phenomena / low energy threshold / deposited energy / Energy spectra / /

Organization

University of Tokyo / Department of Physics / Osaka University / Stanford Linear Accelerator Center / US Federal Reserve / Hiroshima University / Institute of Space and Astronautical Science / Stanford / /

Person

Kazuhiro Nakazawaa / Hiroyasu Tajimac / Shin Watanabea / Stanford Linear / Masaharu Nomachie / Takaaki Tanakaa / Tadayuki Takahashia / Yasushi Fukazawad / /

/

Position

guard / author / /

Product

VA32TA.5 This LSI / Compton / /

ProvinceOrState

California / /

Technology

semiconductor / FPGA / radiation / X-ray / semiconductors / bump bonding technology / simulation / /

SocialTag