Solid-State Electronics / NIST Electronics / World Scientific Publishing / on Semiconductor / Electrical Engineering Laboratory / /
Country
Singapore / / /
Event
Person Communication and Meetings / /
Facility
National Institute of Standards and Technology / NIST Centralized Computing Facility / Howard Hung National Institute of Standards and Technology / National Institute of Standards and Technology Table / NIST Information Technology Laboratory / /
IndustryTerm
technology roadmaps / energy spacings / energy bands / carrier concentrations / majority carrier electrons / carrier densities / carrier-carrier interactions / energy / iterative and self-consistent solution / minority carrier holes / /
MusicGroup
Bottom / Transverse L / Top / Transverse X / Heavy / L / X / Light / NcX for the X / Splitoff / Effective / Spin / Number / /
OperatingSystem
UNIX / Fermi / /
Organization
Institute of Standards and Technology Table / U.S. Department of Commerce / U.S. Securities and Exchange Commission / NIST Information Technology Laboratory / National Institute of Standards and Technology / Technology Administration / Visualization Group / Mathematical and Computational Sciences Division / /
Person
William George / Herbert S. Bennett / Mary-Lou Blessing / William Mitchell / Ai / James Sims / Wilbur Hurst / Jeremiah Lowney / Denis Lehane / James Filliben / Alan Heckert / Howard Hung / James Maslar / / /
Position
author / Governor / computational scientist / /
Technology
semiconductor / UNIX / Information Technology / digital video / semiconductors / dielectric / optoelectronics / GUI / /
Volume 108, Number 3, May-June[removed]Journal of Research of the National Institute of Standards and Technology [J. Res. Natl. Inst. Stand. Technol. 108, [removed]Dependence of Electron Density on Fermi